DARK DEFECTS IN INGAASP/INP DOUBLE HETEROSTRUCTURE LASERS UNDER ACCELERATED AGINGFUKUDA M; WAKITA K; IWANE G et al.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 3; PP. 1246-1250; BIBL. 17 REF.Article

LIFE TESTS ON OPTICAL SEMICONDUCTOR DEVICES FOR USE IN MEDIUM/SMALL CAPACITY AND INTRA-OFFICE OPTICAL FIBER TRANSMISSION SYSTEMSWAKITA K; IWANE G; IKEGAMI T et al.1981; REV. ELECTR. COMMUNIC. LAB.; JPN; DA. 1981; VOL. 29; NO 11-12; PP. 1231-1240; BIBL. 11 REF.Article

CHANNELLED SUBSTRATE BURIED HETEROSTRUCTURE INGAASP/INP LASER EMITTING AT 1.55 MUTAKAHASHI S; SAITO H; IWANE G et al.1980; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1980; VOL. 16; NO 24; PP. 922-923; BIBL. 11 REF.Article

RELIABILITY TESTS ON OPTICAL SEMICONDUCTOR DEVICES FOR OPTICAL FIBER TRANSMISSION SYSTEMSWAKITA K; FUKUDA M; IWANE G et al.1979; REV. ELECTR. COMMUNIC. LAB.; JPN; DA. 1979; VOL. 27; NO 11-12; PP. 1021-1028; BIBL. 8 REF.Article

INGAASP/INP PLANAR-STRIPE LASERS WITH CHEMICALLY ETCHED MIRRORSADACHI S; KAWAGUCHI H; IWANE G et al.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 4; PP. 883-886; BIBL. 20 REF.Article

A NEW ETCHANT SYSTEM, K₂CR₂O₇-H₂SO₄-HCL, FOR GAAS AND INPADACHI S; KAWAGUCHI H; IWANE G et al.1981; J. MATER. SCI.; ISSN 0022-2461; GBR; DA. 1981; VOL. 16; NO 9; PP. 2449-2456; BIBL. 10 REF.Article

Correlation between degradation and device characteristic changes in InGaAsP/InP buried heterostructure lasersFUKUDA, M; IWANE, G.Journal of applied physics. 1986, Vol 59, Num 4, pp 1031-1037, issn 0021-8979Article

Degradation of active region in InGaAsP/InP buried heterostructure laserFUKUDA, M; IWANE, G.Journal of applied physics. 1985, Vol 58, Num 8, pp 2932-2936, issn 0021-8979Article

ROOM-TEMPERATURE C.W. OPERATION OF INP/INGAASP/INP DOUBLE HETEROSTRUCTURE DIODE LASERS EMITTING AT 1,55 MU MKAWAGUCHI H; TAKAHEI K; TOYOSHIMA Y et al.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 21; PP. 669-670; BIBL. 5 REF.Article

Modal and relative intensity noise under VHF modulation in InGaAsP/InP degradationFUKUDA, M; IWANE, G.Electronics Letters. 1984, Vol 20, Num 23, pp 964-965, issn 0013-5194Article

FACET DEGRADATION AND PASSIVATION OF INGAASP/INP LASERSFUKUDA M; TAKAHEI K; IWANE G et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 1; PP. 18-21; BIBL. 10 REF.Article

1.55-MU M NARROW PLANAR STRIPE INGAASP LASERS WITH DEEP ZN DIFFUSIONKAWAGUCHI H; TAKAHEI K; SUZUKI Y et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 12; PP. 957-959; BIBL. 9 REF.Article

ACCELERATED AGING TEST OF INGAASP/INP DOUBLE-HETEROSTRUCTURE LASER DIODES WITH SINGLE TRANSVERSE MODEIMAI H; MORIMOTO M; ISHIKAWA H et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 1; PP. 16-17; BIBL. 7 REF.Article

Screening by aging test for highly reliable laser diodesFUJITA, O; NAKANO, Y; IWANE, G et al.Electronics Letters. 1985, Vol 21, Num 24, pp 1172-1173, issn 0013-5194Article

Reliability of semiconductor lasers and detectors for undersea transmission systemsNAKANO, Y; SUDO, H; IWANE, G et al.IEEE journal on selected areas in communications. 1984, Vol 2, Num 6, pp 985-991, issn 0733-8716Article